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Home / Covalent Academy / Tackling Miniaturization Challenges: High-Resolution Interface Analysis in Advanced Semiconductor Packaging

Tackling Miniaturization Challenges: High-Resolution Interface Analysis in Advanced Semiconductor Packaging

In this session, Dr. Naohiko Kawasaki from Toray Research Center (Japan) introduces powerful analytical techniques for investigating the chemical and physical properties of heterojunction interfaces in modern semiconductor devices. As microelectronic components become increasingly compact, understanding nanoscale interactions at bonding interfaces—such as those in 3D stacked structures and RDL (redistribution layer) interposers—is more important than ever.

Who Should Watch?

This webinar is designed for everyone who is optimizing device performance, evaluating packaging reliability, or exploring new materials. This webinar will help you to enhance your nanoscale interface analysis strategy.

Related Materials

Download Slides (.pdf)

What You’ll Learn About Analysis in Advanced Semiconductor Packaging:

  1. How AFM-IR and STEM-EELS tools support chemical structure analysis of interface
  2. The role of in-situ TEM in assessing electrical properties at the nanoscale
  3. Case studies demonstrating chemical analysis of bonding interfaces and multi-layer stacks in packaging

About Interface Characterization

Interface characterization refers to the study and analysis of the structural, chemical, and electrical properties at the boundaries between different materials or layers within a device. These interfaces—often only a few nanometers thick—can include bonding regions between metals, semiconductors, insulators, or polymers used in advanced electronic packaging.

Characterization involves the use of high-resolution analytical techniques to gather detailed information about:

  • Chemical composition at the interface (e.g., presence of oxides, contaminants, or diffusion layers)
  • Physical structure, such as layer thickness, roughness, and crystalline orientation
  • Electrical behavior, including resistance, conductivity, and failure mechanisms at junctions

By combining methods like AFM-IR, STEM-EELS, and in-situ TEM, scientists and engineers can map the distribution of elements, visualize nanoscale features, and measure electronic properties at the microscopic level.